1-3 years of experience
Concerned about your lack of experience? Learn More...
Employment Type:
Full time
Job Category:
RF PA Design and Modeling Engineer
(This job is no longer available)
Qorvo | Chandler, AZ
Grad Date

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Job Description

Responsible for RF Power Amplifier design and modeling of RF Power Amplifier and subsystem for Base Station market using both HBT and GaN technologies.

Design work involves RF power amplifier design with low impedance matching networks using integrated passive components, high power packages and chip components on the module and PCB for Multi-band Doherty amplifiers enabling carrier aggregation in next generation Base Stations.

Modeling work involves device and RF front end modeling using both active and passive devices in subsystem level. Work closely with modeling, device, packaging, product and application engineers for a successful product launch. RF power amplifier design and modeling experiences of wideband Doherty RF Power devices that range in power from 2W - 500W and frequency from 400MHz - 6GHz for 3G/4G/5G Base Station. Guide product development through critical stages including concept/feasibility; create device and circuit layout using internal custom Design Kit (PDK), preproduction and qualification.

May help to create an internal Design Kit. RF circuit design using linear and nonlinear models and 2.5D/3D electromagnetic (EM) simulation. Doherty PA design and modeling w/ various DPD architectures. RF test board design, test and characterization and data analysis. Mentor team members in design concepts and best practices following continuous improvement goals.

Use of wireless technology, including GSM, UMTS, CDMA, LTE, LTE-A, and IEEE 802.11. Understanding of microwave metrology, RF front-end architecture, RF components (power amplifiers, LNAs, switches, filters, etc.) technologies, and advanced packaging techniques. Use of of semiconductor device physics and process technologies, InP and InGaAs compound semiconductors, and HBT technologies. Use of design analysis and simulation tools such as ADS, CST Microwave Study and/or HFSS. Use of load pull automatic system, actual implementations of numerical modeling methods and linearization techniques for RF power amplifier, ADS circuit simulator and 3D EM simulator.

Require MSEE and 2 years' experience in RF Compounded Semiconductors, RF Microwave Power Amplifier Design, and DPD PA Modeling; InP and InGaAs compound semiconductors, HBT technologies, Microwave metrology, Microwave TRL calibration method and design, or PhD in Electrical Engineering and no experience.

No relocation is offered for this position.

We are an Equal Opportunity (EEO) / Affirmative Action employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, military or veteran status, physical or mental disability, genetic information, and/or any other status protected by law. Qualified candidates apply online at www.qorvo.com/careers

Experience Level Individual Contributor Job Type Full Time Location AZ - Chandler

About Qorvo

Qorvo ("kor-vo") enables customers to launch next-generation designs even faster. Our unique combination of talent, technology, scalability and innovation helps you eliminate barriers to bringing your most powerful ideas to market. "We believe that our new name reflects our company's commitment to keep customers at the center of all that we do," said Bob Bruggeworth, Qorvo president and CEO. "As a new leader in RF solutions, Qorvo will offer the agility, innovation and precision customers need for success in mobile, infrastructure, and defense markets."