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Intern - Signal Integrity Engineer
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Job Description

Req. ID: 132465

Micron Technology's vision is to transform how the world uses information to enrich life and our commitment to people, innovation, tenacity, collaboration, and customer focus allows us to fulfill our mission to be a global leader in memory and storage solutions. This means conducting business with integrity, accountability, and professionalism while supporting our global community.

Micron's Signal Integrity Research and Development (SI R&D) group supports all current and future product development, including DRAM, LPDRAM, NAND, NOR, 3DX, DIMMs and SSDs within the consumer, server, wireless, and embedded product groups.

Within the larger SI R&D group, the SI Research team focuses on the following:

* Interface pathfinding to actively identify and evaluate opportunities for future performance scaling through advanced signaling techniques and package / channel improvement, including circuit power reduction, data encoding, channel equalization, new interconnect technologies, etc.
* Traditional interface standardization efforts through JEDEC and similar standards bodies and through close customer / partner engagements.
* Modeling and methodology enhancement within the entire SI group and throughout Micron where applicable.
* Active mentoring of junior team members through informal one-on-one collaboration and through more formal department-level and corporate-level learning and teaching opportunities.

As a Signal Integrity Engineer intern, you will have the opportunity to engage across multiple disciplines and organizations (e.g., Signal Integrity, Circuit and Chip Design, Packaging R&D and System Integration). You will also be exposed to different product modeling and analysis methods as you support and learn from lead and principle Signal Integrity engineers.


To be successful in this role, you should have the following skills/qualifications:

* Two semesters or less to complete a BSEE or MSEE (or equivalent degrees) with an avg. GPA 3.2/4.0 or higher
* You will not graduate prior to September 2019.
* You have completed coursework covering electromagnetics, transmission lines and analog circuits.
* Very desirable to have experience with signal integrity principles
* You have exposure to simulation, modeling, and analysis tools
* Deep understanding of HSPICE, ADS, HFSS, ANSOFT, Matlab, and others.
* Desirable to have an understanding of and experience with measurement equipment
* Oscilloscopes, TDR, Vector Network Analyzer (VNA), etc.
* You should be ambitious and enjoy taking ownership of assigned projects, exhibit good written and verbal communication skills, and have the ability to work well independently and within a diverse team environment.

About Us

As the leader in innovative memory solutions, Micron is helping the world make sense of data by delivering technology that is transforming how the world uses information. Through our global brands - Micron, Crucial and Ballistix - we offer the industry's broadest portfolio. We are the only company manufacturing today's major memory and storage technologies: DRAM, NAND, NOR and 3D XPoint™- memory. Our solutions are purpose built to leverage the value of data to unlock financial insights, accelerate scientific breakthroughs and enhance communication around the world.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron's Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or submit: Job Information Request Form to: TJA@micron.com.

Keywords: Boise || Idaho (US-ID) || United States (US) || DEG (DRAM Engineering Group) || Intern || Internship || Engineering || Not Applicable ||

About Micron Technology, Inc.

Micron Technology, Inc. is a global manufacturer and marketer of semiconductor devices, principally dynamic random access memory (DRAM) and NAND Flash memory (NAND) and complementary metal-oxide semiconductor (CMOS) image sensors. It operates in two segments: Memory and Imaging. The Memory segment's primary products are DRAM and NAND Flash, which are components used in an array of electronic applications, including personal computers, mobile phones, Flash memory cards, moving picture experts group layer-3 audio (MP3/4) players and other consumer electronics products. The Company's Imaging segment operates under the Aptina brand name. Imaging's primary products are CMOS image sensors, which are components used in an array of electronic applications, including mobile phones, webcams and other consumer, security and automotive applications. In March 2008, the Company announced that it had launched Aptina Imaging, creating a separate division and identity for its CMOS imaging business.